Abstract

GARCIA MOLLEJA, J et al. Study of AlN thin films deposited by DC magnetron sputtering: effect of pressure on texture. An. AFA [online]. 2015, vol.26, n.4, pp.190-194. ISSN 0327-358X.

Aluminum nitride is a ceramic compound with many technological applications in several fields: optics, electronics and resonators. AlN performance is highly dependent on experimental conditions during film deposition. This paper focuses on the effect of working pressure on residual stress development. Thus, AlN thin films have been deposited with reactive DC magnetron sputtering technique under different working pressures (3-6 mTorr) on Si (100) substrates. These samples were characterized by XRD (X-Ray Diffraction), HRTEM (High Resolution Transmission Electron Microscopy) and SAED (Selected Area Electron Diffraction) techniques. Results show that residual stress is dependent on film thickness: compressive at low thicknesses, tensile at high thicknesses. Moreover, residual stress changes with the working pressure and at high pressures this stress is reduced, hampering the (00·2) texture development, crucial in technological applications.

Keywords : AlN; DC reactive sputtering; High resolution transmission electron microscopy; Stress profile; X-ray diffraction.

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