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Anales (Asociación Física Argentina)
Print version ISSN 0327-358XOn-line version ISSN 1850-1168
Abstract
TORO SALAZAR, C; CODNIA, J and AZCARATE, M. L. IR photolysis of phenylsilane. An. AFA [online]. 2016, vol.27, n.1, pp.30-34. ISSN 0327-358X.
Silicon films are used in solar cells and microelectronics. Phenylsilane has proved to be a an efficient precursor for the production of silicon thin films. In this paper the infrared multiple-photon dissociation of phenylsilane in the 0,16 - 160 J/cm2 fluence range was studied in a molecular jet. Time of flight mass spectrometry was used for real time detection of the dissociation products. The three center elimination of H2 is the only reaction that takes place in the fluence range of this work. The kinetics of the phenylsililene radical evidences that it is decomposed producing SiH, C2 and butadiene.
Keywords : Phenylsilane; IR multiphoton dissociation; Time of flight mass spectrometry; Butadiene.