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Anales (Asociación Física Argentina)

Print version ISSN 0327-358XOn-line version ISSN 1850-1168

Abstract

FILIPPIN, F.A; SANTOS, E  and  AVALLE, L.B. Semiconductor properties OG titaniun oxide formed on glass/Ti/TiO2 substrates in diluted acid solution. An. AFA [online]. 2017, vol.28, n.2, pp.45-49. ISSN 0327-358X.

The spontaneously formed TiO2 film on titanium metal confers high resistance properties to corrosion in different environments. Titanium oxide films can be formed by thermal and electrochemical external perturbations up to different thicknesses, these present characteristics of a semiconductor. The semiconductor properties of anodically formed oxide films have been interpreted by graphic representations of Mott-Schottky. In this report, the TiO2 growth was carried out using potentiodynamic conditions, where the highest positive potential limit Ef was 1.85 V vs NHE (Normal Hydrogen Electrode) in 0.01 M HClO4. The oxide formed was stable in the potential region studied in this report. By Mott-Schottky analysis the electrode glass/Ti/TiO2 has a concentration of oxygen vacancies of the order of 1022 cm-3. From this result the oxide films have proved to have n-type semiconductor characteristics.

Keywords : Titanium dioxide; Anodization; Mott-Schottky.

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