Resumo

FILIPPIN, F.A; SANTOS, E  e  AVALLE, L.B. Semiconductor properties OG titaniun oxide formed on glass/Ti/TiO₂ substrates in diluted acid solution. An. AFA [online]. 2017, vol.28, n.2, pp.45-49. ISSN 0327-358X.

The spontaneously formed TiO₂ film on titanium metal confers high resistance properties to corrosion in different environments. Titanium oxide films can be formed by thermal and electrochemical external perturbations up to different thicknesses, these present characteristics of a semiconductor. The semiconductor properties of anodically formed oxide films have been interpreted by graphic representations of Mott-Schottky. In this report, the TiO₂ growth was carried out using potentiodynamic conditions, where the highest positive potential limit E_f was 1.85 V vs NHE (Normal Hydrogen Electrode) in 0.01 M HClO4. The oxide formed was stable in the potential region studied in this report. By Mott-Schottky analysis the electrode glass/Ti/TiO₂ has a concentration of oxygen vacancies of the order of 10²² cm^-3. From this result the oxide films have proved to have n-type semiconductor characteristics.

Palavras-chave : Titanium dioxide; Anodization; Mott-Schottky.

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