Resumo

DECIMA, Santiago; DIAZ, Eliseo Narciso; FUENTES, Ana Silvina  e  FILIPPIN, Francisco Ángel. Semiconductive properties of Ti oxide on glass/Ti and Ti plate substrates in contact with a 0.5 M HClO₄ solution. Tecnol. cienc. [online]. 2022, n.45, pp.14-30.  Epub 11-Nov-2022. ISSN 1666-6933.  http://dx.doi.org/10.33414/rtyc.45.14-30.2022.

The study of the semiconductor/electrolyte interface has applications in the production of photoelectrochemical solar cells. The semiconductor properties of an n-type semiconductor can be evaluated by the Mott-Schottky model when it is brought into contact with an electrolyte. Titanium (Ti) is a metal that presents a spontaneous oxide film, titanium dioxide (TiO2), which can be grown by anodizing. In this work, Ti oxide films were grown anodically on the glass/Ti and Ti plate substrates, and the Mott-Schottky model was applied to evaluate their semiconductor properties in contact with a 0.5 M HClO4 solution at room temperature. Under the conditions described in this work, the glass/Ti/TiO2 and Ti plate/TiO2 electrodes exhibit the behavior of an n-type semiconductor with a concentration of donors of the order of 10 21 and 10 20 cm −3 , respectively. The oxide films were stable before and after the experiments.

Palavras-chave : photoelectrochemical solar cells; semiconductor properties; Mott-Schottky model; titanium dioxide.

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